Uniformity analysis of wafer scale sub-25 nm wide nanowire array nanoimprint mold fabricated by PEDAL process

• Published in: Microelectronic engineering 2007-05, Vol.84 (5), p.1523-1527
• Main Authors: Sonkusale, Sachin R., Di Spigna, Neil H., Franzon, Paul D.
• Format: Article
• Language: English
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Mold; Nanoimprint; Nanowires; PEDAL; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2007.01.210

In earlier publications [S. Sonkusale, C.J. Amsinck, D.P. Nackashi, N.H. Di Spigna, D. Barlage, M. Johnson, P.D. Franzon, E. Physica, Low Dimensional Systems and Nanostructures 28 (2005) 107–114; S. Sonkusale, C.J. Amsinck, D.P. Nackashi, N.H. Di Spigna, D. Barlage, M. Johnson, P.D. Franzon, in: Proceedings of Nano Science and Technology Institute (NSTI) conference 2005, vol. 3, pp. 255.], we proposed and successfully demonstrated an unconventional lithographic technique called PEDAL process (planar edge defined alternate layer) to define wafer scale sub 25 nm nanowires and nanoimprint template. In this publication, the uniformity results on array of sixteen line-width structures with obtained by PEDAL process are presented. The average pitch of array across the 4 in. wafer was measured to be 40.8 nm with the standard deviation of 2.3 nm where as the average pitch of the lines in an array was found to be 41.5 nm with the standard deviation of 4.6 nm. After Pd lift-off the average pitch in nanowire array was measured to be 41.9 nm with standard deviation of 1.8 nm, which is close to the values obtained for the template.