Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films

• Published in: Journal of physics. D, Applied physics Applied physics, 2007-07, Vol.40 (13), p.3985-3990
• Main Authors: Chien, Chi-Hui, Jian, Sheng-Rui, Wang, Chung-Ting, Juang, Jenh-Yih, Huang, J C, Lai, Yi-Shao
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Mechanical and acoustical properties; Physical properties of thin films, nonelectronic; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/40/13/011

Nanoindentation-induced mechanical deformation in GaN thin films prepared by metal-organic chemical-vapour deposition was investigated using the Berkovich diamond tip in combination with the cross-sectional transmission electron microscopy (XTEM). By using focused ion beam milling to accurately position the cross-section of the indented region, the XTEM results demonstrate that the major plastic deformation was taking place through the propagation of dislocations. The present observations are in support of attributing the pop-ins that appeared in the load-displacement curves to the massive dislocation activities occurring underneath the indenter during the loading cycle. The absence of indentation-induced new phases might have been due to the stress relaxation via the substrate and is also consistent with the fact that no discontinuity was found upon unloading.