TEM-based phase retrieval of p-n junction wafers using the transport of intensity equation

Two cross-sectional specimens of pattered silicon wafers implanted with either arsenic or phosphor are investigated in the transmission electron microscope (TEM). Phase retrieval using the transport of intensity equation (TIE) is suggested as a means for nano-scale sensing of dopants in such p--n ju...

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Bibliographic Details
Published in:Philosophical magazine (Abingdon, England) England), 2007-08, Vol.87 (24), p.3565-3578
Main Authors: Petersen, T. C., Keast, V. J., Johnson, K., Duvall, S.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Materials science
Microelectronic fabrication (materials and surfaces technology)
Nanoscale materials and structures: fabrication and characterization
Other topics in nanoscale materials and structures
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Two cross-sectional specimens of pattered silicon wafers implanted with either arsenic or phosphor are investigated in the transmission electron microscope (TEM). Phase retrieval using the transport of intensity equation (TIE) is suggested as a means for nano-scale sensing of dopants in such p--n junction wafers. Improvements in TIE phase retrieval are proposed and implemented using a through-focus series of large numbers of images. Polynomial fitting to robustly estimate the required intensity defocus-derivative is shown to enhance data quality, resulting in phase maps that portray detail over a broad range of spatial-frequencies in a realistic manner.
ISSN:1478-6435
1478-6443
DOI:10.1080/14786430701361388