A Sub-1-V, 10 ppm/ ^C, Nanopower Voltage Reference Generator

• Published in: IEEE journal of solid-state circuits 2007-07, Vol.42 (7), p.1536-1542
• Main Authors: De Vita, G., Iannaccone, G.
• Format: Article
• Language: English
• Subjects: Applied sciences; Circuit properties; Circuits; CMOS process; CMOS technology; CMOS voltage reference; DC generators; Design. Technologies. Operation analysis. Testing; Dielectric, amorphous and glass solid devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Integrated circuits; low power; Low voltage; MOSFETs; Photonic band gap; Power generation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Signal convertors; temperature compensation; Temperature dependence; Threshold voltage
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2007.899077

An extreme low power voltage reference generator operating with a supply voltage ranging from 0.9 to 4 V has been implemented in AMS 0.35-mum CMOS process. The maximum supply current measured at the maximum supply voltage and at 80degC is 70 nA. A temperature coefficient of 10 ppm/degC is achieved as the combined effect of 1) a perfect suppression of the temperature dependence of mobility; 2) the compensation of the channel length modulation effect on the temperature coefficient; and 3) the absence of the body effect. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than -53 and -42 dB, respectively. The occupied chip area is 0.045 mm 2 .