Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes

The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-08, Vol.54 (8), p.1860-1866
Main Authors: Tu Hoang, Holleman, J., Phuong LeMinh, Schmitz, J., Mchedlidze, T., Arguirov, T., Kittler, M.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Circuit properties
Design. Technologies. Operation analysis. Testing
Devices
Diodes
Dislocation loops
Electric, optical and optoelectronic circuits
Electroluminescence
Electronics
Exact sciences and technology
Infrared
Integrated circuits
integrated optics
Integrated optics. Optical fibers and wave guides
integrated optoelectronics
Integrated optoelectronics. Optoelectronic circuits
Junctions
Light emission
Light emitting diodes
Light sources
light-emitting diodes (LEDs)
luminescent devices
Optical and optoelectronic circuits
optoelectronic devices
semiconductor device fabrication
semiconductor devices
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
Silicon
Silicon diodes
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Description
Summary:The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.901072