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Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes
The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced...
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| Published in: | IEEE transactions on electron devices 2007-08, Vol.54 (8), p.1860-1866 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c413t-f2539424aaef6ae044fb2fa20949dc2079b9531af929f8351a007374463295e23 |
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| cites | cdi_FETCH-LOGICAL-c413t-f2539424aaef6ae044fb2fa20949dc2079b9531af929f8351a007374463295e23 |
| container_end_page | 1866 |
| container_issue | 8 |
| container_start_page | 1860 |
| container_title | IEEE transactions on electron devices |
| container_volume | 54 |
| creator | Tu Hoang Holleman, J. Phuong LeMinh Schmitz, J. Mchedlidze, T. Arguirov, T. Kittler, M. |
| description | The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits. |
| doi_str_mv | 10.1109/TED.2007.901072 |
| format | article |
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Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2007.901072</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Circuit properties ; Design. Technologies. Operation analysis. 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(IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-f2539424aaef6ae044fb2fa20949dc2079b9531af929f8351a007374463295e23</citedby><cites>FETCH-LOGICAL-c413t-f2539424aaef6ae044fb2fa20949dc2079b9531af929f8351a007374463295e23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4277961$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18951440$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tu Hoang</creatorcontrib><creatorcontrib>Holleman, J.</creatorcontrib><creatorcontrib>Phuong LeMinh</creatorcontrib><creatorcontrib>Schmitz, J.</creatorcontrib><creatorcontrib>Mchedlidze, T.</creatorcontrib><creatorcontrib>Arguirov, T.</creatorcontrib><creatorcontrib>Kittler, M.</creatorcontrib><title>Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Diodes</subject><subject>Dislocation loops</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electroluminescence</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Infrared</subject><subject>Integrated circuits</subject><subject>integrated optics</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>integrated optoelectronics</subject><subject>Integrated optoelectronics. Optoelectronic circuits</subject><subject>Junctions</subject><subject>Light emission</subject><subject>Light emitting diodes</subject><subject>Light sources</subject><subject>light-emitting diodes (LEDs)</subject><subject>luminescent devices</subject><subject>Optical and optoelectronic circuits</subject><subject>optoelectronic devices</subject><subject>semiconductor device fabrication</subject><subject>semiconductor devices</subject><subject>Semiconductor diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor lasers</subject><subject>Silicon</subject><subject>Silicon diodes</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkT1vGzEMhoUgBeKknTt0OQRoO52jD-qDYxE7aQCjHZp2FRRZShScT450HvrvK8NBA2RoJ5LgwxckX0LeMzpnjOLF7XIx55TqOVJGNT8iMyal7lGBOiYzSpnpURhxQk5rfWylAuAz8utmjMMujD50OXaLVIfs3ZTy2K1y3tauJdND6L4FV_qGFlfCulul-4epW25SrXvyquRN9yMNybdikfI61LfkTXRDDe-e4xn5ebW8vfzar75f31x-WfUemJj6yKVA4OBciMoFChDveHScIuDac6rxDqVgLiLHaIRkrh0oNIASHGXg4ox8PuhuS37ahTrZtpQPw-DGkHfVIhWKGyb1f0ljqJKIXDTy0z9JAQBIDWvg-SvwMe_K2O61RgmNKNRe7eIA-ZJrLSHabUkbV35bRu3eONuMs3vj7MG4NvHxWdZV74b289Gn-jJmUDIA2rgPBy6FEP62gWuNiok_K5-d2g</recordid><startdate>20070801</startdate><enddate>20070801</enddate><creator>Tu Hoang</creator><creator>Holleman, J.</creator><creator>Phuong LeMinh</creator><creator>Schmitz, J.</creator><creator>Mchedlidze, T.</creator><creator>Arguirov, T.</creator><creator>Kittler, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Testing</topic><topic>Devices</topic><topic>Diodes</topic><topic>Dislocation loops</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electroluminescence</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Infrared</topic><topic>Integrated circuits</topic><topic>integrated optics</topic><topic>Integrated optics. Optical fibers and wave guides</topic><topic>integrated optoelectronics</topic><topic>Integrated optoelectronics. Optoelectronic circuits</topic><topic>Junctions</topic><topic>Light emission</topic><topic>Light emitting diodes</topic><topic>Light sources</topic><topic>light-emitting diodes (LEDs)</topic><topic>luminescent devices</topic><topic>Optical and optoelectronic circuits</topic><topic>optoelectronic devices</topic><topic>semiconductor device fabrication</topic><topic>semiconductor devices</topic><topic>Semiconductor diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor lasers</topic><topic>Silicon</topic><topic>Silicon diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tu Hoang</creatorcontrib><creatorcontrib>Holleman, J.</creatorcontrib><creatorcontrib>Phuong LeMinh</creatorcontrib><creatorcontrib>Schmitz, J.</creatorcontrib><creatorcontrib>Mchedlidze, T.</creatorcontrib><creatorcontrib>Arguirov, T.</creatorcontrib><creatorcontrib>Kittler, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEEE/IET Electronic Library</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tu Hoang</au><au>Holleman, J.</au><au>Phuong LeMinh</au><au>Schmitz, J.</au><au>Mchedlidze, T.</au><au>Arguirov, T.</au><au>Kittler, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2007-08-01</date><risdate>2007</risdate><volume>54</volume><issue>8</issue><spage>1860</spage><epage>1866</epage><pages>1860-1866</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 mum. The so-called D1 line at 1.5 mum is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2007.901072</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1860-1866 |
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| source | IEEE Electronic Library (IEL) Journals |
| subjects | Annealing Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Devices Diodes Dislocation loops Electric, optical and optoelectronic circuits Electroluminescence Electronics Exact sciences and technology Infrared Integrated circuits integrated optics Integrated optics. Optical fibers and wave guides integrated optoelectronics Integrated optoelectronics. Optoelectronic circuits Junctions Light emission Light emitting diodes Light sources light-emitting diodes (LEDs) luminescent devices Optical and optoelectronic circuits optoelectronic devices semiconductor device fabrication semiconductor devices Semiconductor diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers Silicon Silicon diodes |
| title | Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes |
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