Transient transport in III-nitrides: interplay of momentum and energy relaxation times

The ultrafast transient transport in wide-gap polar III-nitride semiconductors in electric fields is considered. A nonlinear and time-dependent (on the evolution of the nonequilibrium-irreversible thermodynamic state of the system) Drude-like law is derived, with the conductivity related to a so-cal...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2007-08, Vol.19 (34), p.346214-346214 (13)
Main Authors: Rodrigues, Clóves G, Vasconcellos, Áurea R, Luzzi, Roberto, Freire, Valder N
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
General formulation of transport theory
Physics
Theory of electronic transport
scattering mechanisms
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Summary:The ultrafast transient transport in wide-gap polar III-nitride semiconductors in electric fields is considered. A nonlinear and time-dependent (on the evolution of the nonequilibrium-irreversible thermodynamic state of the system) Drude-like law is derived, with the conductivity related to a so-called transport time (or current characteristic time which is related to a memory-dependent momentum relaxation time). From the collision operators, present in the evolution equations for the carriers' energy and momentum, are obtained quantities playing the role of time-dependent energy and momentum relaxation times. The electron drift velocity overshoot at intermediate-intensity fields in GaN, AlN and InN is evidenced, and its onset is explained as a result of the interplay of momentum and energy relaxation times.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/19/34/346214