On the low-frequency noise of pmosfets with eMOSFETs SiGe Source/Drain and fully silicided metal gate

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Published in:IEEE electron device letters 2007, Vol.28 (11), p.987-989
Main Authors: SIMOEN, E, VERHEYEN, P, SHICKOVA, A, LOO, R, CLAEYS, C, MEMBER, Senior
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 989
container_issue 11
container_start_page 987
container_title IEEE electron device letters
container_volume 28
creator SIMOEN, E
VERHEYEN, P
SHICKOVA, A
LOO, R
CLAEYS, C
MEMBER, Senior
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1558-0563
language eng
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source IEEE Electronic Library (IEL) Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title On the low-frequency noise of pmosfets with eMOSFETs SiGe Source/Drain and fully silicided metal gate
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