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IrSi Schottky-barrier infrared detectors with wavelength response beyond 12 mu m
Schottky-barrier infrared detectors with a 4-nm-thick IrSi electrode have been fabricated on p-Si substrates previously implanted with low-energy boron ions. Low-energy boron ion implantation has been used to form a shallow p/sup +/-Si layer that lowers the barrier height of IrSi-Si Schottky-barrier...
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Published in: | IEEE electron device letters 1990-09, Vol.11 (9), p.415-417 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Schottky-barrier infrared detectors with a 4-nm-thick IrSi electrode have been fabricated on p-Si substrates previously implanted with low-energy boron ions. Low-energy boron ion implantation has been used to form a shallow p/sup +/-Si layer that lowers the barrier height of IrSi-Si Schottky-barrier contacts by the image-force effect and field-assisted tunneling. IrSi infrared detectors with a cutoff wavelength beyond 12 mu m have been obtained by this technique. The optical barrier height found by spectral response measurements is 0.100 eV, which corresponds to a detector cutoff wavelength of 12.4 mu m.< > |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/55.62974 |