Device sensitivity of field-plated polysilicon high-voltage TFTs and their application to low-voltage operation

The device sensitivity to the offset length variations in the recently proposed field-plated (FP) polysilicon high-voltage thin-film transistor (HVTFT) has been studied. The device characteristics of the new FP-HVTFTs are found to be much more immune to misalignment errors; this is a very desirable...

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Bibliographic Details
Published in:IEEE electron device letters 1990-11, Vol.11 (11), p.541-543
Main Authors: Huang, T.-Y., Wu, I.-W., Lewis, A.G., Chiang, A., Bruce, R.H.
Format: Article
Language:English
Subjects:
Applied sciences
Dielectric substrates
Electronics
Exact sciences and technology
Fabrication
Implants
Leakage current
Microelectronics
Polymer films
Printers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin film devices
Thin film transistors
Transistors
Voltage
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Summary:The device sensitivity to the offset length variations in the recently proposed field-plated (FP) polysilicon high-voltage thin-film transistor (HVTFT) has been studied. The device characteristics of the new FP-HVTFTs are found to be much more immune to misalignment errors; this is a very desirable feature, especially for large-area applications. FP-HVTFTs also exhibit lower leakage current than their conventional counterparts for up to 100-V operation. At typical low-voltage operation (e.g. 20 V), an improvement of about three orders of magnitude in the on/off current ratio can be readily achieved. These features, together with the simpler processing and improved turn-on characteristics reported earlier, make the FP-TFT a very promising device architecture for large-area microelectronics.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.63026