Critical issues in plasma-assisted vapor deposition processes

The currently used plasma-assisted vapor deposition processes are reviewed. They are analyzed in terms of the three steps in deposition processes, i.e. generation of the depositing species, transport from source to substrate, and film growth on the substrate. The role of the plasma in each of the st...

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Bibliographic Details
Published in:IEEE transactions on plasma science 1990-12, Vol.18 (6), p.846-854
Main Author: Bunshah, R.F.
Format: Article
Language:English
Subjects:
360601 - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies
Atherosclerosis
CHARGED PARTICLES
CHEMICAL COMPOSITION
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
COATINGS
Cross-disciplinary physics: materials science
rheology
CRYSTAL STRUCTURE
DOCUMENT TYPES
Exact sciences and technology
IONS
MATERIALS SCIENCE
Methods of deposition of films and coatings
film growth and epitaxy
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
Physics
PLASMA
Plasma applications
Plasma chemistry
PLASMA DIAGNOSTICS
Plasma sources
Plasma transport processes
RADIATION EFFECTS
REVIEWS
Sputtering
SUBSTRATES
Thermal spraying
VAPOR DEPOSITED COATINGS
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Summary:The currently used plasma-assisted vapor deposition processes are reviewed. They are analyzed in terms of the three steps in deposition processes, i.e. generation of the depositing species, transport from source to substrate, and film growth on the substrate. The role of the plasma in each of the steps for the various processes is discussed. All processes involve two sets of parameters: the plasma parameters and the process parameters. These parameters couple to a greater or lesser degree in each of the basic processes, which reflects their versatility. The roles of plasma volume chemistry and plasma diagnostics are discussed. It is clear that a deeper basic understanding of plasma-assisted deposition processes necessitates a much greater volume of work on plasma diagnostics coupled with theoretical estimates. The influence of ion bombardment on the structure, composition, and properties of the films is considered. Hybrid processes which attempt to circumvent the somewhat deleterious intercoupling of the plasma and process parameters are briefly discussed.< >
ISSN:0093-3813
1939-9375
DOI:10.1109/27.61495