Pulsed excimer and Nd:YAG laser crystallization of a-Si:H: The specific role of hydrogen

We have investigated the possibility of preparing good-quality polycrystalline silicon by laser crystallization of hydrogenated and non-hydrogenated amorphous silicon thin films deposited onto glass substrates. The morphology and surface roughness of the crystallized layer is shown to be a function...

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Bibliographic Details
Published in:Applied surface science 1990-12, Vol.46 (1), p.378-382
Main Authors: Elliq, M., Fogarassy, E., Stoquert, J.P., Fuchs, C., de Unamuno, S., Prévot, B., Pattyn, H.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We have investigated the possibility of preparing good-quality polycrystalline silicon by laser crystallization of hydrogenated and non-hydrogenated amorphous silicon thin films deposited onto glass substrates. The morphology and surface roughness of the crystallized layer is shown to be a function of the laser fluence and especially of the hydrogen content for both pulsed excimer and scanned Nd:YAG lasers used in this study.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(90)90174-X