Avalanche multiplication in a compact bipolar transistor model for circuit simulation

A simple weak avalanche model valid in a wide range of voltages and currents, is presented. The proposed model is derived by using the base-collector depletion capacitance for predicting the avalanche current. The model needs only one additional transistor parameter; the extraction method and temper...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1989-07, Vol.36 (7), p.1376-1380
Main Authors: Kloosterman, W.J., De Graaff, H.C.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
Capacitance
Circuit simulation
Current density
Electronics
Exact sciences and technology
Heating
Hot carriers
Predictive models
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature dependence
Transistors
Voltage
Zirconium
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Summary:A simple weak avalanche model valid in a wide range of voltages and currents, is presented. The proposed model is derived by using the base-collector depletion capacitance for predicting the avalanche current. The model needs only one additional transistor parameter; the extraction method and temperature dependence of this parameter are discussed. The decrease in avalanche current for high collector current densities may originate from internal device heating, a voltage drop in the epilayer, or mobile carriers in the depleted part. From experimental results it is concluded that, below a critical hot-carrier current, the decrease in avalanche current due to mobile carriers is negligible.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.30944