Hydrogen in crystalline semiconductors: A review of experimental results

The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the para...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1991-04, Vol.170 (1-4), p.3-20
Main Authors: Johnson, N.M., Doland, C., Ponce, F., Walker, J., Anderson, G.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Summary:The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the parameters that have thus far been deduced from experimental studies on hydrogen-dopant complexes and hydrogen migration in crystalline silicon and gallium arsenide.
ISSN:0921-4526
1873-2135
DOI:10.1016/0921-4526(91)90104-M