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High electron mobility GaN/AlxGa1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition

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Bibliographic Details
Published in:Applied physics letters 1991-05, Vol.58 (21), p.2408-2410
Main Authors: ASIF KHAN, M, VAN HOVE, J. M, KUZNIA, J. N, OLSON, D. T
Format: Article
Language:English
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.104886