Annealing and ion-implantation effects in semi-insulating GaAs wafers obtained from photo-induced microwave reflectrometry

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1989, Vol.136 (12), p.3795-3800
Main Authors: GUTMANN, R. J, CAMPBELL, C. S, HEIMLICH, M. C, BORREGO, J. M, BLISS, D
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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ISSN:0013-4651
1945-7111