Highly selective etching of Si3N4 to SiO2 employing fluorine and chlorine atoms generated by microwave discharge

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Bibliographic Details
Published in:Journal of the Electrochemical Society 1989-07, Vol.136 (7), p.2032-2034
Main Authors: SUTO, S, HAYASAKA, N, OKANO, H, HORIIKE, Y
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface structure and topography
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Online Access:Get full text
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.2097146