In situ monitoring of silicon nitride surface temperature from rotational temperature of a nitrogen molecule during rf glow discharge processing

Saved in:
Bibliographic Details
Published in:Applied physics letters 1989, Vol.55 (23), p.2396-2398
Main Authors: ISHIHARA, S, OTSUKA, A, NAGATA, S
Format: Article
Language:English
Subjects:
Exact sciences and technology
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma devices
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102291