Dose and damage measurement in low dose ion implantation in silicon by photo-acoustic displacement and minority carrier lifetime

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Bibliographic Details
Published in:Japanese journal of applied physics 1991, Vol.30 (6A), p.L1025-L1027
Main Authors: WASHIDZU, G, HARA, T, ICHIKAWA, R, TAKAMATSU, H, SUMIE, S, NISHIMOTO, NAKAI, Y, HASHIZUME, H, MIYOSHI, T
Format: Article
Language:English
Subjects:
Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Physics
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ISSN:0021-4922
1347-4065