Improved Electrical Properties of ALD HfxZr1-xO2 Dielectrics Deposited on Ultrathin PVD Zr Underlayer

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Bibliographic Details
Published in:IEEE electron device letters 2008, Vol.29 (1), p.57-59
Main Authors: TRIYOSO, Dina H, HEGDE, Rama I, JIANG, Jack, SCHAEFFER, James K, RAYMOND, Mark V
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.911979