The Influence of InxGa1-xAs and GaAs1-yPy Layers Surrounding the AlAs Release Layer in the Epitaxial Lift-Off Process

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Bibliographic Details
Published in:Crystal growth & design 2007, Vol.7 (12), p.2472-2480
Main Authors: VAN NIFTRIK, Antonius T. J, SCHERMER, John J, BAUHUIS, Gerhardus J, VAN DEELEN, Joop, MULDER, Peter, LARSEN, Poul K
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Theory and models of film growth
Thin film structure and morphology
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ISSN:1528-7483
1528-7505