A Nanodamascene Process for Advanced Single-Electron Transistor Fabrication

A process design based on a nanowire structure is demonstrated with the fabrication of metallic single-electron transistors. The method is capable of subattofarad resolution resulting in transistors that exhibited Coulomb blockade up to approximately 430 K. An analysis showed that these devices have...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nanotechnology 2008-01, Vol.7 (1), p.68-73
Main Authors: Dubuc, C., Beauvais, J., Drouin, D.
Format: Article
Language:English
Subjects:
Applied sciences
Blocking
Capacitance
Chemical mechanical polishing (CMP)
Cross-disciplinary physics: materials science
rheology
Design engineering
electron beam lithography (EBL)
Electronics
Energy resolution
Exact sciences and technology
Fabrication
FET circuits
Fluctuation
Fluctuations
Lithography
Materials science
Microelectronic fabrication (materials and surfaces technology)
Molecular electronics, nanoelectronics
Nanocomposites
nanodevice characterization
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Physics
Quantum wires
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Single electron transistors
single-electron transistor (SET)
Temperature distribution
Temperature sensors
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A process design based on a nanowire structure is demonstrated with the fabrication of metallic single-electron transistors. The method is capable of subattofarad resolution resulting in transistors that exhibited Coulomb blockade up to approximately 430 K. An analysis showed that these devices have sufficient operational margin to sustain process fluctuations and still operate within the temperature limits of conventional silicon field effect transistors.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2007.913430