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Photoinduced effect on carrier transport properties in La0.7Sr0.3MnO3/Si heterostructure

The photoinduced effect on carrier transport properties has been investigated in the La0.7Sr0.3MnO3/Si heterostructure prepared by the pulsed laser deposition method. A giant photoinduced relative change in the resistance of about 6783% in the current-perpendicular-to-plane (CPP) geometry of the het...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2008-02, Vol.41 (4), p.045105-045105 (4)
Main Authors: Jin, K X, Zhao, S G, Tan, X Y, Chen, C L
Format: Article
Language:English
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Summary:The photoinduced effect on carrier transport properties has been investigated in the La0.7Sr0.3MnO3/Si heterostructure prepared by the pulsed laser deposition method. A giant photoinduced relative change in the resistance of about 6783% in the current-perpendicular-to-plane (CPP) geometry of the heterostructure has been observed when it is irradiated by a 532 nm laser at T = 270 K. The rising time of about 100 mus in the CPP geometry of the heterostructure under modulated laser irradiation of 200 mus duration seems to be independent of temperature. This provides an innovation for potential application in functional optical and electrical devices.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/41/4/045105