Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy

Using synchrotron-based luminescence excitation spectroscopy in the energy range 4-20 eV at 8 K, the indirect Gamma-X optical band-gap transition in cubic boron nitride is determined as 6.36 +/- 0.03 eV, and the quasi-direct band-gap energy of hexagonal boron nitride is determined as 5.96 +/- 0.04 e...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2008-02, Vol.20 (7), p.075233-075233 (7)
Main Authors: Evans, D A, McGlynn, A G, Towlson, B M, Gunn, M, Jones, D, Jenkins, T E, Winter, R, Poolton, N R J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other solid inorganic materials
Photoluminescence
Physics
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Summary:Using synchrotron-based luminescence excitation spectroscopy in the energy range 4-20 eV at 8 K, the indirect Gamma-X optical band-gap transition in cubic boron nitride is determined as 6.36 +/- 0.03 eV, and the quasi-direct band-gap energy of hexagonal boron nitride is determined as 5.96 +/- 0.04 eV. The composition and structure of the materials are self-consistently established by optically detected x-ray absorption spectroscopy, and both x-ray diffraction and Raman measurements on the same samples give independent confirmation of their chemical and structural purity: together, the results are therefore considered as providing definitive measurements of the optical band-gap energies of the two materials.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/20/7/075233