Approximation of non-zero transistor ON resistance in class-E amplifiers

This work aims to develop accurate design formulae for class E power amplifier designs by considering the non-zero transistor "ON" resistance. With this consideration, the output characteristics of the amplifier can be approximated more accurately. Based on the derived analytical formulas,...

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Bibliographic Details
Main Authors: Ho, C.K., Wong, H., Ma, S.W.
Format: Conference Proceeding
Language:English
Subjects:
Amplifiers
Applied sciences
Circuit analysis
Circuit properties
Cities and towns
Design engineering
Electric, optical and optoelectronic circuits
Electrical engineering. Electrical power engineering
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Frequency
Inductors
Microwave transistors
Power amplifiers
Power electronics, power supplies
Power engineering and energy
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switches
Switching circuits
Transistors
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Description
Summary:This work aims to develop accurate design formulae for class E power amplifier designs by considering the non-zero transistor "ON" resistance. With this consideration, the output characteristics of the amplifier can be approximated more accurately. Based on the derived analytical formulas, several class E amplifiers with operation frequency ranging from 100 kHz to 900 MHz were designed. The calculated characteristics of the amplifiers were validated with PSpice and Microwave Office simulations and experimental results. Good agreements were obtained.
DOI:10.1109/ICCDCS.2004.1393360