In-depth electrical characterization of sub-45 nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack : Ultimate integration on silicon conference 2007

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Bibliographic Details
Published in:Solid-state electronics 2008, Vol.52 (4), p.489-497
Main Authors: FERUGLIO, S, ANDRIEU, F, FAYNOT, O, GHIBAUDO, G
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0038-1101
1879-2405