Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers : International Conference on Microelectronic Test Structures

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 2008, Vol.21 (2), p.195-200
Main Authors: DRIUSSI, Francesco, SELMI, Luca, AKIL, Nader, VAN DUUREN, Michiel J, VAN SCHAIJK, Rob
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Testing, measurement, noise and reliability
Online Access:Get full text
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ISSN:0894-6507
1558-2345