Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

This letter describes an analysis of the degradation of InGaN-based laser diodes. The influence of current, temperature, and optical power level on the degradation kinetics has been analyzed by means of a wide set of stress tests carried out under different operating conditions. We demonstrate the f...

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Bibliographic Details
Published in:IEEE electron device letters 2008-06, Vol.29 (6), p.578-581
Main Authors: Meneghini, M., Meneghesso, G., Trivellin, N., Zanoni, E., Orita, K., Yuri, M., Ueda, D.
Format: Article
Language:English
Subjects:
Activated
Degradation
Devices
Diode lasers
Electrothermal effects
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium nitride
Kinetic theory
laser diode (LD)
Laser diodes
Lasers
Optics
Physics
reliability
Semiconductor lasers
laser diodes
Stimulated emission
Stresses
Temperature
Testing
Thermal degradation
Thermal stresses
Threshold current
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Summary:This letter describes an analysis of the degradation of InGaN-based laser diodes. The influence of current, temperature, and optical power level on the degradation kinetics has been analyzed by means of a wide set of stress tests carried out under different operating conditions. We demonstrate the following: 1.) the degradation rate is strongly related to the operating current level; 2.) high-temperature stress does not determine significant degradation of lasers characteristics; and 3.) the intensity of the optical field does not significantly influence the degradation rate. Degradation process is found to be electrothermally activated and is ascribed to the increase of the nonradiative recombination rate in the active layer, with subsequent decrease of the efficiency of the devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.921098