Characterization of RbAg4I5 films prepared by pulsed laser deposition

• Published in: Journal of physics. D, Applied physics Applied physics, 2008-06, Vol.41 (11), p.115304-115304 (5)
• Main Authors: Yang, B, Liang, X F, Guo, H X, Yin, K B, Yin, J, Liu, Z G
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffusion in solids; Exact sciences and technology; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Self-diffusion and ionic conduction in nonmetals; Transport properties of condensed matter (nonelectronic)
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/41/11/115304

RbAg4I5 solid electrolyte films have been prepared using the pulsed laser deposition technique. Their structures have been characterized by x-ray diffraction, and the surface and cross-section morphologies have been investigated by using scanning electron microscopy. It was found that larger energy density of the laser beam favoured the crystallization of RbAg4I5 particles and increased the resistance of the 'off'state, and lower energy density of the laser beam induces the appearance of the AgI phase in the films and reduces the resistance of the 'off'state. A narrow 'window' of the substrate temperature (around 80 deg C) for the deposition of pure RbAg4I5 films has also been observed. The RbAg4I5 film deposited on Pt/TiO2/SiO2/Si(1 1 1) substrates at 80 deg C shows a uniform and flat surface. All the RbAg4I5 memory devices show obvious resistive switching behaviour.