Encapsulated tapered active layer 1.3 μm Fabry-Perot laser operating at high temperature

High temperature operation at 1.3 μm Fabry-Perot lasers with tapered active region is reported for silicone encapsulated chips. Burn-in tests demonstrate that the components are fully compatible with non-sealed low-cost packaging.

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Bibliographic Details
Main Authors: Lestra, A, Aubert, P, Colson, V, Gentner, J.L, Grard, E, Lafragette, J.L, Le Gouezigou, L, Pinquier, A, Roux, L, Toullier, D, Tregoat, D, Fernier, B
Format: Conference Proceeding
Language:English
Subjects:
Design of specific laser systems
Efficiency, stability, gain, and other operational parameters
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
High-temperature techniques and instrumentation
pyrometry
Laser optical systems: design and operation
Lasers
Lasing action in semiconductors
Optical communication
Optical communication devices
Optics
Optoelectronics manufacturing
Packaging
Physics
Product packaging
Semiconductor lasers
Semiconductor lasers
laser diodes
Testing
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Description
Summary:High temperature operation at 1.3 μm Fabry-Perot lasers with tapered active region is reported for silicone encapsulated chips. Burn-in tests demonstrate that the components are fully compatible with non-sealed low-cost packaging.
ISSN:0537-9989
DOI:10.1049/cp:19971360