Extraction of Transport Dynamics in AIGaN/GaN HFETs Through Free Carrier Absorption: Groups in Nitrides, SiC and ZnO

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Bibliographic Details
Published in:Journal of electronic materials 2008, Vol.37 (5), p.578-584
Main Authors: WU, Yuh-Renn, HINCKLEY, John M, SINGH, Jasprit
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0361-5235
1543-186X