Ultralow Temperature Processing and Integration of Dielectric Resonators on Silicon Substrates for System-on-Chip Applications

• Published in: IEEE transactions on electron devices 2008-07, Vol.55 (7), p.1727-1732
• Main Authors: Bijumon, P.V., Freundorfer, A.P., Sayer, M., Antar, Y.M.M.
• Format: Article
• Language: English
• Subjects: Acoustic wave devices, piezoelectric and piezoresistive devices; Antennas on silicon substrates; Applied sciences; Ceramics; Circuit properties; Cylinders; Design. Technologies. Operation analysis. Testing; Dielectrics; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Grain boundaries; Integrated circuits; integrated dielectric resonators (DRs); Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; microwave integrated circuits; Oscillators, resonators, synthetizers; Recrystallization; Resonators; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon substrates; System on chip
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2008.925148

Ultralow temperature processing of Ba 2 Ti 9 O 20 thin-film ceramics and the attachment of a porous dielectric resonator cylinder on a conducting prepatterned silicon substrate have been accomplished using a hydrothermal process at 150degC/3 h. Enhanced densification and mechanical strength at the bulk ceramic-thin-film interface were induced by a dissolution-crystallization process involving a sol-gel solution under 13-15 atm pressure. Recrystallization forms electrical bridges between powder particles to form an interconnected microstructure, which eliminates grain boundary defects and, hence, improves the dielectric properties. This method has potential for growth of dielectric resonators on integrated circuits for system-on-chip applications and is implemented for the fabrication of an integrated dielectric resonator antenna.