Impact of Process-Induced Strain on Coulomb Scattering Mobility in Short-Channel n-MOSFETs

This letter provides an experimental assessment of Coulomb scattering mobility for advanced short-channel strained devices. By accurate mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel nMOSFETs. This letter...

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Bibliographic Details
Published in:IEEE electron device letters 2008-07, Vol.29 (7), p.768-770
Main Authors: Chen, W.P.N., Pin Su, Goto, K.
Format: Article
Language:English
Subjects:
Applied sciences
Assessments
Capacitive sensors
CMOS technology
Compressive stress
Coulomb friction
Coulomb mobility
Devices
Electronics
Exact sciences and technology
Extraction
MOSFET
MOSFET circuits
Scattering
Semiconductor device manufacture
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Silicon
Strain
strained silicon
Stresses
Substrates
Temperature dependence
Transistors
Uniaxial strain
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Summary:This letter provides an experimental assessment of Coulomb scattering mobility for advanced short-channel strained devices. By accurate mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel nMOSFETs. This letter indicates that the Coulomb mobility has significant stress dependency. Moreover, the stress sensitivity of the Coulomb mobility shows strong temperature dependence. Because it is the interface scattering that counteracts the stress sensitivity of the bulk-impurity-limited mobility, further reducing the interface charges will be crucial to future mobility scaling.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2000909