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Analysis and Modeling of Threshold Voltage Mismatch for CMOS at 65 nm and Beyond

This letter investigates random dopant fluctuation transistor mismatch. The dominance of the halo implant is demonstrated experimentally and with simulation, and a compact model form is developed for improved representation of the phenomenon.

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Bibliographic Details
Published in:IEEE electron device letters 2008-07, Vol.29 (7), p.802-804
Main Authors: Johnson, J.B., Hook, T.B., Yoo-Mi Lee
Format: Article
Language:English
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Summary:This letter investigates random dopant fluctuation transistor mismatch. The dominance of the halo implant is demonstrated experimentally and with simulation, and a compact model form is developed for improved representation of the phenomenon.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2000649