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Analysis and Modeling of Threshold Voltage Mismatch for CMOS at 65 nm and Beyond
This letter investigates random dopant fluctuation transistor mismatch. The dominance of the halo implant is demonstrated experimentally and with simulation, and a compact model form is developed for improved representation of the phenomenon.
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Published in: | IEEE electron device letters 2008-07, Vol.29 (7), p.802-804 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This letter investigates random dopant fluctuation transistor mismatch. The dominance of the halo implant is demonstrated experimentally and with simulation, and a compact model form is developed for improved representation of the phenomenon. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2008.2000649 |