Germanium Source and Drain Stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up...

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Bibliographic Details
Published in:IEEE electron device letters 2008-07, Vol.29 (7), p.808-810
Main Authors: Tsung-Yang Liow, Kian-Ming Tan, Lee, R.T.P., Ming Zhu, Tan, B.L.-H., Balasubramanian, N., Yee-Chia Yeo
Format: Article
Language:English
Subjects:
Applied sciences
Capacitive sensors
Channels
Compliance
Compressive stress
Drains
Electronics
Epitaxial growth
Etching
Exact sciences and technology
FETs
FinFET
Germanium
Germanium silicon alloys
Lattices
Microelectronics
multiple-gate transistor (MuGFET)
Nanocomposites
Nanomaterials
Nanowires
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanium
strain
stress
Substrates
Transistors
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Summary:Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% I Dsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2000669