Room-temperature ferromagnetism in Cu+ implanted ZnO nanowires

We experimentally showed ferromagnetism at above 300 K for ZnO nanowires prepared by reactive vapour deposition and subsequently implanted with 2 at% of Cu. The magnetic moments of the samples annealed in oxygen and in argon at 600 deg C for 120 min are about 0.42 muB and 0.33 muB per Cu atom, respe...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2008-07, Vol.41 (13), p.135010-135010 (5)
Main Authors: Shuai, M, Liao, L, Lu, H B, Zhang, L, Li, J C, Fu, D J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Magnetic properties and materials
Magnetic properties of nanostructures
Materials science
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
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Summary:We experimentally showed ferromagnetism at above 300 K for ZnO nanowires prepared by reactive vapour deposition and subsequently implanted with 2 at% of Cu. The magnetic moments of the samples annealed in oxygen and in argon at 600 deg C for 120 min are about 0.42 muB and 0.33 muB per Cu atom, respectively. No ferromagnetism-related secondary phase existed according to the results of x-ray diffraction, x-ray photoelectron spectroscopy and transmission electron microscopy including HRTEM and EELS mapping. It can be concluded that the d9 configuration in the ground state of Cu2+ plays an important role in ferromagnetism. This controllable and shallow doped ion implantation technique may find potential applications in spintronic, especially nano-spintronic, devices.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/41/13/135010