DC and Transient Performance of 4H-SiC Double-Implant MOSFETs : Silicon carbide devices and technology

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008, Vol.55 (8), p.1824-1829
Main Authors: LOSEE, Pete A, MATOCHA, Kevin, ARTHUR, Stephen D, NASADOSKI, Jeffrey, STUM, Zachary, GARRETT, Jerome L, SCHUTTEN, Michael, DUNNE, Greg, STEVANOVIC, Ljubisa
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0018-9383
1557-9646