Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs : Silicon carbide devices and technology

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008, Vol.55 (8), p.1830-1834
Main Authors: MATOCHA, Kevin, DUNNE, Greg, SOLOVIEV, Stanislav, BEAUPRE, Richard
Format: Article
Language:English
Subjects:
Applied sciences
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0018-9383
1557-9646