Nonvolatile Memory via Spin Polaron Formation

A nonvolatile memory is explored theoretically by utilizing the magnetic exchange interaction between localized holes and an adjacent ferromagnetic (FM) material. The active device consists of a buried semiconductor quantum dot (QD) and an FM insulating layer that share an interface. The hole popula...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2008-07, Vol.7 (4), p.480-483
Main Authors: Enaya, H., Semenov, Y.G., Kim, K.W., Zavada, J.M.
Format: Article
Language:English
Subjects:
Applied sciences
Bistability
Cross-disciplinary physics: materials science
rheology
Design. Technologies. Operation analysis. Testing
Electronics
Elementary particle exchange interactions
Exact sciences and technology
Ferrimagnetic materials
Ferromagnetic materials
Free energy
Insulating layers
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Magnetic materials
Magnetic memories
Magnetic semiconductors
Magnetization
Materials science
Mathematical models
Nanoscale materials and structures: fabrication and characterization
Nonvolatile memory
Particle spin
Physics
Polarization
Polarons
Quantum dots
Reservoirs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor materials
semiconductor memories
Semiconductors
Storage and reproduction of information
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Description
Summary:A nonvolatile memory is explored theoretically by utilizing the magnetic exchange interaction between localized holes and an adjacent ferromagnetic (FM) material. The active device consists of a buried semiconductor quantum dot (QD) and an FM insulating layer that share an interface. The hole population in the QD is controlled by particle transfer with a reservoir of itinerant holes over a permeable barrier. A theoretical model based on the free energy calculation demonstrates the existence of a bistable state through the mechanism of a collective spin polaron, whose formation and dissolution can be manipulated electrically via a gate bias pulse. The parameter space window suitable for bistability is examined along with the conditions that support maximum nonvolatility. The limitation of QD size scaling is analyzed in terms of the bit retention time.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2008.926332