Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal-Oxide-Semiconductor Capacitors

Deep-depletion capacitance measurements on n-type 3C-SiC MOS capacitors that exhibit both field and temperature dependencies are presented and analyzed in this letter. A two-step electron-detrapping process, in which electrons first tunnel from neutral near-interface traps to interface traps and are...

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Bibliographic Details
Published in:IEEE electron device letters 2008-09, Vol.29 (9), p.1021-1023
Main Authors: Kong, F.C.J., Dimitrijev, S., Jisheng Han
Format: Article
Language:English
Subjects:
3C-SiC
Applied sciences
Australia
Capacitance measurement
Capacitance transients
Dielectric, amorphous and glass solid devices
Electric variables
Electron traps
Electronics
Exact sciences and technology
Impact ionization
MOS capacitors
near-interface traps
Pulse measurements
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Temperature dependence
Time measurement
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Description
Summary:Deep-depletion capacitance measurements on n-type 3C-SiC MOS capacitors that exhibit both field and temperature dependencies are presented and analyzed in this letter. A two-step electron-detrapping process, in which electrons first tunnel from neutral near-interface traps to interface traps and are subsequently thermally emitted into the silicon carbide conduction band, is identified as the responsible mechanism. A mathematical model is proposed for this two-step detrapping process.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2001753