The Charge Plasma P-N Diode

A simulation study on a new rectifier concept is presented. This device basically consists of two gates with different workfunctions on top of a thin intrinsic or lowly doped silicon body. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the si...

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Bibliographic Details
Published in:IEEE electron device letters 2008-12, Vol.29 (12), p.1367-1369
Main Authors: Hueting, R.J.E., Rajasekharan, B., Salm, C., Schmitz, J.
Format: Article
Language:English
Subjects:
Applied sciences
Charge
Charge carrier processes
Charge plasma (CP)
Compound structure devices
current
Devices
Diodes
Doping
Electron plasma
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Gates
MOS devices
Plasma devices
Plasma materials processing
Plasma simulation
Rectifiers
Semiconductor device doping
semiconductor device modeling
Semiconductor devices
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor materials
Silicon
Simulation
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Summary:A simulation study on a new rectifier concept is presented. This device basically consists of two gates with different workfunctions on top of a thin intrinsic or lowly doped silicon body. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e., a charge plasma p-n diode is formed in which no doping is required. Simulation results reveal a good rectifying behavior for well-chosen gate workfunctions and device dimensions. This concept could be applied for other semiconductor devices and materials as well in which doping is an issue.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2006864