Room temperature negative differential capacitance in self-assembled quantum dots

The negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few k...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2008-12, Vol.41 (23), p.235107-235107 (4)
Main Authors: Ilchenko, V V, Marin, V V, Lin, S D, Panarin, K Y, Buyanin, A A, Tretyak, O V
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Physics
Quantum dots
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Summary:The negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/41/23/235107