Observation of Intermediate States in Magnetic Tunnel Junctions With Composite Free Layer

The current-induced magnetization switching was studied in the MTJ devices with composite free layer (CoFeB/CoFeB-oxide/CoFeB). The stable intermediate state was observed due to the multi-domain structure induced by the dipole field and large device size. Two different stable intermediate states wer...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2008-11, Vol.44 (11), p.2496-2499
Main Authors: Xiaofeng Yao, Malmhall, R., Ranjan, R., Jian-Ping Wang
Format: Article
Language:English
Subjects:
Composite free layer
Computer integrated manufacturing
Cross-disciplinary physics: materials science
rheology
Current density
Current distribution
Current measurement
current-induced magnetization switching
Devices
Dipoles
Electrical resistance measurement
Exact sciences and technology
intermediate state
Magnetic field measurement
magnetic random-access memory (MRAM)
Magnetic switching
magnetic tunnel junction
Magnetic tunneling
Magnetism
Magnetization
Materials science
Nucleation
Other topics in materials science
Physics
Polarization
spin transfer
Switching
Tunnel junctions
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Description
Summary:The current-induced magnetization switching was studied in the MTJ devices with composite free layer (CoFeB/CoFeB-oxide/CoFeB). The stable intermediate state was observed due to the multi-domain structure induced by the dipole field and large device size. Two different stable intermediate states were observed in different applied current direction. The switching mechanisms of those two intermediate states are different, which is also indicated by the switching current distribution. Reversible intermediate state was also observed at low applied current, which may be due to the domain nucleation.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2008.2003072