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The hysteresis caused by interface trap and anomalous positive charge in Al/CeO2-SiO2/silicon capacitors

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Bibliographic Details
Published in:	Japanese journal of applied physics 1997, Vol.36 (12B), p.L1681-L1684
Main Authors:	ROH, Y, KIM, K, JUNG, D
Format:	Article
Language:	English
Subjects:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:	Get full text
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