The Electrical and Interfacial Properties of Metal-High-κ Oxide-Semiconductor Field-Effect Transistors With LaAlO3 Gate Dielectric

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Bibliographic Details
Published in:IEEE electron device letters 2009-02, Vol.30 (2), p.161-164
Main Authors: CHANG, Ingram Yin-Ku, YOU, Sheng-Wen, JUAN, Pi-Chun, WANG, Ming-Tsong, LEE, Joseph Ya-Min
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Diodes
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2009554