Experimental Results of on-State Resistance Reduction by STI Fingers in LDMOSFET

This letter demonstrates a successful method for on-state resistance reduction up to 20% by shallow trench isolation (STI) fingers and with extra NLDD implant in the fingered region simultaneously for medium power devices. This fingered region provides a multidimensional electric field that avoids M...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2009-02, Vol.30 (2), p.192-194
Main Authors: Ru-Yi Su, Chiang, P.Y., Jeng Gong, Tsung-Yi Huang, Tsai, C.L., Chou, C.C., Liu, C.M.
Format: Article
Language:English
Subjects:
Applied sciences
Breakdown
Breakdown voltage and electric field shaping
Devices
Displays
Drains
Electric potential
Electric resistance
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Fingers
Implants
Monitoring
MOSFET circuits
Multidimensional systems
ON-state resistance
Power electronics, power supplies
Reduction
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
shallow trench isolation (STI) finger
Structural engineering
Threshold voltage
Transistors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This letter demonstrates a successful method for on-state resistance reduction up to 20% by shallow trench isolation (STI) fingers and with extra NLDD implant in the fingered region simultaneously for medium power devices. This fingered region provides a multidimensional electric field that avoids MOSFET breakdown voltage decrease, and it also shortens the drain-current conduction path. Therefore, low on-state resistance and high drain driving current is obtained in our proposed device. Careful design for structural parameters of this STI finger is needed to achieve the optimum R ON performance without hurting breakdown voltage.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2010565