High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory

A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor-type flash memory is successfully demonstrated. Compared with a conventional FinFET SONOS device, the DSSB FinFET SONOS device exhibits high-speed programming at low voltage. The sharp dopant-segre...

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Bibliographic Details
Published in:IEEE electron device letters 2009-03, Vol.30 (3), p.265-268
Main Authors: Choi, Sung-Jin, Han, Jin-Woo, Jang, Moon-Gyu, Kim, Jin Soo, Kim, Kwang Hee, Lee, Gi Sung, Oh, Jae Sub, Song, Myeong Ho, Park, Yun Chang, Kim, Jeoung Woo, Choi, Yang-Kyu
Format: Article
Language:English
Subjects:
Applied sciences
Barriers
Compound structure devices
Decision support systems
Devices
Dopant-segregated
Drains
Electronics
Exact sciences and technology
FinFET
FinFETs
Flash memory
Flash memory (computers)
High speed
hot electrons
Integrated circuits
Integrated circuits by function (including memories and processors)
Interfaces
Low voltage
Nickel
Nonvolatile memory
NOR Flash
Power generation
Programming
Schottky barrier
Schottky barriers
Secondary generated hot electron injection
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon-oxide-nitride-oxide-silicon (SONOS)
SONOS devices
source-side injection
Transistors
Voltage
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Summary:A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor-type flash memory is successfully demonstrated. Compared with a conventional FinFET SONOS device, the DSSB FinFET SONOS device exhibits high-speed programming at low voltage. The sharp dopant-segregated Schottky contact at the source side can generate hot electrons, and it can be used to provide high injection efficiency at low voltage without any constraint on the choice of the proper gate and drain voltage. The DSSB FinFET SONOS device is therefore a promising candidate for nor-type flash memory with high-speed and low-power programming.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2010720