Study on the performance of sub 100 nm LACLATI MOSFETs for digital application

With the help of extensive simulations, we systematically investigated the effects of varying tilt angle of halo implant in sub 100 nm lateral asymmetric channel (LAC) MOSFETs on the reverse short channel effects, the on current and the hot carrier immunity. The devices with large angle tilt implant...

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Bibliographic Details
Published in:Microelectronics and reliability 2009-04, Vol.49 (4), p.392-396
Main Authors: Sarkar, Partha, Mallik, Abhijit, Sarkar, Chandan Kumar
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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Summary:With the help of extensive simulations, we systematically investigated the effects of varying tilt angle of halo implant in sub 100 nm lateral asymmetric channel (LAC) MOSFETs on the reverse short channel effects, the on current and the hot carrier immunity. The devices with large angle tilt implants also show the substantial reduction in the subthreshold swing, improvement in I ON/ I OFF ratio and significantly the lower junction capacitance as compared to the devices with low angle tilt implant. It is also observed that the subthreshold characteristics do not change as the channel length decreases for such devices. These devices, known as lateral asymmetric channel with large angle tilt implant (LACLATI), will therefore have much improved performance in comparison to a low angle tilt implant LAC devices for digital applications.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2008.12.015