Study on the performance of sub 100 nm LACLATI MOSFETs for digital application

With the help of extensive simulations, we systematically investigated the effects of varying tilt angle of halo implant in sub 100 nm lateral asymmetric channel (LAC) MOSFETs on the reverse short channel effects, the on current and the hot carrier immunity. The devices with large angle tilt implant...

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Published in:Microelectronics and reliability 2009-04, Vol.49 (4), p.392-396
Main Authors: Sarkar, Partha, Mallik, Abhijit, Sarkar, Chandan Kumar
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Mallik, Abhijit
Sarkar, Chandan Kumar
description With the help of extensive simulations, we systematically investigated the effects of varying tilt angle of halo implant in sub 100 nm lateral asymmetric channel (LAC) MOSFETs on the reverse short channel effects, the on current and the hot carrier immunity. The devices with large angle tilt implants also show the substantial reduction in the subthreshold swing, improvement in I ON/ I OFF ratio and significantly the lower junction capacitance as compared to the devices with low angle tilt implant. It is also observed that the subthreshold characteristics do not change as the channel length decreases for such devices. These devices, known as lateral asymmetric channel with large angle tilt implant (LACLATI), will therefore have much improved performance in comparison to a low angle tilt implant LAC devices for digital applications.
doi_str_mv 10.1016/j.microrel.2008.12.015
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fullrecord <record><control><sourceid>elsevier_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_21525542</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0026271408004447</els_id><sourcerecordid>S0026271408004447</sourcerecordid><originalsourceid>FETCH-LOGICAL-e242t-669034899435797cf76c45a3b0a7c86ed69637bc6ec3b789ca750b32022471b3</originalsourceid><addsrcrecordid>eNo1kD1PwzAURS0EEqXwF5AXxoT3bMdONqqKj0qBDu3AZjmOA66SJrJTpP57UhWmuxxd3XsIuUdIEVA-7tLO29AH16YMIE-RpYDZBZlhrlhSCPy8JDMAJhOmUFyTmxh3AKAAcUY-NuOhPtJ-T8dvRwcXmj50Zm8d7RsaDxVFALrvaLlYlovtir6vNy_P20gnjNb-y4-mpWYYWm_N6Pv9LblqTBvd3V_OyXbCl29JuX5dLRdl4phgYyJlAVzkRSF4pgplGyWtyAyvwCibS1fLQnJVWeksr1ReWKMyqDgDxoTCis_Jw7l2MNGatgnTYh_1EHxnwlEzzFiWCTZxT2fOTVt-vAs6Wu-md7UPzo667r1G0CeNeqf_NeqTRo1MTxr5L6P9ZsM</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Study on the performance of sub 100 nm LACLATI MOSFETs for digital application</title><source>Elsevier:Jisc Collections:Elsevier Read and Publish Agreement 2022-2024:Freedom Collection (Reading list)</source><creator>Sarkar, Partha ; Mallik, Abhijit ; Sarkar, Chandan Kumar</creator><creatorcontrib>Sarkar, Partha ; Mallik, Abhijit ; Sarkar, Chandan Kumar</creatorcontrib><description>With the help of extensive simulations, we systematically investigated the effects of varying tilt angle of halo implant in sub 100 nm lateral asymmetric channel (LAC) MOSFETs on the reverse short channel effects, the on current and the hot carrier immunity. The devices with large angle tilt implants also show the substantial reduction in the subthreshold swing, improvement in I ON/ I OFF ratio and significantly the lower junction capacitance as compared to the devices with low angle tilt implant. It is also observed that the subthreshold characteristics do not change as the channel length decreases for such devices. These devices, known as lateral asymmetric channel with large angle tilt implant (LACLATI), will therefore have much improved performance in comparison to a low angle tilt implant LAC devices for digital applications.</description><identifier>ISSN: 0026-2714</identifier><identifier>EISSN: 1872-941X</identifier><identifier>DOI: 10.1016/j.microrel.2008.12.015</identifier><identifier>CODEN: MCRLAS</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Microelectronics and reliability, 2009-04, Vol.49 (4), p.392-396</ispartof><rights>2009 Elsevier Ltd</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=21525542$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sarkar, Partha</creatorcontrib><creatorcontrib>Mallik, Abhijit</creatorcontrib><creatorcontrib>Sarkar, Chandan Kumar</creatorcontrib><title>Study on the performance of sub 100 nm LACLATI MOSFETs for digital application</title><title>Microelectronics and reliability</title><description>With the help of extensive simulations, we systematically investigated the effects of varying tilt angle of halo implant in sub 100 nm lateral asymmetric channel (LAC) MOSFETs on the reverse short channel effects, the on current and the hot carrier immunity. The devices with large angle tilt implants also show the substantial reduction in the subthreshold swing, improvement in I ON/ I OFF ratio and significantly the lower junction capacitance as compared to the devices with low angle tilt implant. It is also observed that the subthreshold characteristics do not change as the channel length decreases for such devices. These devices, known as lateral asymmetric channel with large angle tilt implant (LACLATI), will therefore have much improved performance in comparison to a low angle tilt implant LAC devices for digital applications.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0026-2714</issn><issn>1872-941X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNo1kD1PwzAURS0EEqXwF5AXxoT3bMdONqqKj0qBDu3AZjmOA66SJrJTpP57UhWmuxxd3XsIuUdIEVA-7tLO29AH16YMIE-RpYDZBZlhrlhSCPy8JDMAJhOmUFyTmxh3AKAAcUY-NuOhPtJ-T8dvRwcXmj50Zm8d7RsaDxVFALrvaLlYlovtir6vNy_P20gnjNb-y4-mpWYYWm_N6Pv9LblqTBvd3V_OyXbCl29JuX5dLRdl4phgYyJlAVzkRSF4pgplGyWtyAyvwCibS1fLQnJVWeksr1ReWKMyqDgDxoTCis_Jw7l2MNGatgnTYh_1EHxnwlEzzFiWCTZxT2fOTVt-vAs6Wu-md7UPzo667r1G0CeNeqf_NeqTRo1MTxr5L6P9ZsM</recordid><startdate>20090401</startdate><enddate>20090401</enddate><creator>Sarkar, Partha</creator><creator>Mallik, Abhijit</creator><creator>Sarkar, Chandan Kumar</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>20090401</creationdate><title>Study on the performance of sub 100 nm LACLATI MOSFETs for digital application</title><author>Sarkar, Partha ; Mallik, Abhijit ; Sarkar, Chandan Kumar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e242t-669034899435797cf76c45a3b0a7c86ed69637bc6ec3b789ca750b32022471b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sarkar, Partha</creatorcontrib><creatorcontrib>Mallik, Abhijit</creatorcontrib><creatorcontrib>Sarkar, Chandan Kumar</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Microelectronics and reliability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sarkar, Partha</au><au>Mallik, Abhijit</au><au>Sarkar, Chandan Kumar</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study on the performance of sub 100 nm LACLATI MOSFETs for digital application</atitle><jtitle>Microelectronics and reliability</jtitle><date>2009-04-01</date><risdate>2009</risdate><volume>49</volume><issue>4</issue><spage>392</spage><epage>396</epage><pages>392-396</pages><issn>0026-2714</issn><eissn>1872-941X</eissn><coden>MCRLAS</coden><abstract>With the help of extensive simulations, we systematically investigated the effects of varying tilt angle of halo implant in sub 100 nm lateral asymmetric channel (LAC) MOSFETs on the reverse short channel effects, the on current and the hot carrier immunity. The devices with large angle tilt implants also show the substantial reduction in the subthreshold swing, improvement in I ON/ I OFF ratio and significantly the lower junction capacitance as compared to the devices with low angle tilt implant. It is also observed that the subthreshold characteristics do not change as the channel length decreases for such devices. These devices, known as lateral asymmetric channel with large angle tilt implant (LACLATI), will therefore have much improved performance in comparison to a low angle tilt implant LAC devices for digital applications.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.microrel.2008.12.015</doi><tpages>5</tpages></addata></record>
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subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Study on the performance of sub 100 nm LACLATI MOSFETs for digital application
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T17%3A46%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-elsevier_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20on%20the%20performance%20of%20sub%20100%20nm%20LACLATI%20MOSFETs%20for%20digital%20application&rft.jtitle=Microelectronics%20and%20reliability&rft.au=Sarkar,%20Partha&rft.date=2009-04-01&rft.volume=49&rft.issue=4&rft.spage=392&rft.epage=396&rft.pages=392-396&rft.issn=0026-2714&rft.eissn=1872-941X&rft.coden=MCRLAS&rft_id=info:doi/10.1016/j.microrel.2008.12.015&rft_dat=%3Celsevier_pasca%3ES0026271408004447%3C/elsevier_pasca%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-e242t-669034899435797cf76c45a3b0a7c86ed69637bc6ec3b789ca750b32022471b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true