Iridium oxide deposited by pulsed dc-sputtering for stimulation electrodes

• Published in: Journal of micromechanics and microengineering 2009-07, Vol.19 (7), p.074009-074009 (6)
• Main Authors: van Ooyen, A, Topalov, G, Ganske, G, Mokwa, W, Schnakenberg, U
• Format: Article
• Language: English
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Materials science; Mechanical engineering. Machine design; Mechanical instruments, equipment and techniques; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Micromechanical devices and systems; Physics; Precision engineering, watch making; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0960-1317; 1361-6439
• DOI: 10.1088/0960-1317/19/7/074009

A pulsed-dc reactive sputtering technique was used for iridium oxide thin-film deposition. Pulsing frequency and oxygen flow were varied over several deposition cycles, regarding stimulation electrode applications. Surface and electrochemical analysis were performed for deposition evaluation. The results show the influence of the oxygen flow to the morphology and the electrochemical properties of the reactively sputtered films. Optimal surface structure and electrochemical properties for films deposited at 0.016 mbar working pressure, 100 kHz pulse frequency and 1 mus pulsewidth can be achieved at oxygen flows around 8 to 10 sccm.